High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.

The type II secretion system (Xcp) of Pseudomonas putida is active and involved in the secretion of phosphatases.

The genome of the Gram-negative bacterium Pseudomonas putida harbours a complete set of xcp genes for a type II protein secretion system (T2SS). This study shows that expression of these genes is induced under inorganic phosphate (Pi ) limitation and that the system enables the utilization of various organic phosphate sources. A phosphatase of the PhoX family, previously designated UxpB, was identified, which was produced under low Pi conditions and transported across the cell envelope in an Xcp-dependent manner demonstrating that the xcp genes encode an active T2SS. The signal sequence of UxpB contains a twin-arginine translocation (Tat) motif as well as a lipobox, and both processing by leader peptidase II and Tat dependency were experimentally confirmed. Two different tat gene clusters were detected in the P.?putida genome, of which one, named tat-1, is located adjacent to the uxpB and xcp genes. Both Tat systems appeared to be capable of transporting the UxpB protein. However, expression of the tat-1 genes was strongly induced by low Pi levels, indicating a function of this system in survival during Pi starvation.

The type II secretion system (Xcp) of Pseudomonas putida is active and involved in the secretion of phosphatases.

The genome of the Gram-negative bacterium Pseudomonas putida harbours a complete set of xcp genes for a type II protein secretion system (T2SS). This study shows that expression of these genes is induced under inorganic phosphate (Pi ) limitation and that the system enables the utilization of various organic phosphate sources. A phosphatase of the PhoX family, previously designated UxpB, was identified, which was produced under low Pi conditions and transported across the cell envelope in an Xcp-dependent manner demonstrating that the xcp genes encode an active T2SS. The signal sequence of UxpB contains a twin-arginine translocation (Tat) motif as well as a lipobox, and both processing by leader peptidase II and Tat dependency were experimentally confirmed. Two different tat gene clusters were detected in the P.?putida genome, of which one, named tat-1, is located adjacent to the uxpB and xcp genes. Both Tat systems appeared to be capable of transporting the UxpB protein. However, expression of the tat-1 genes was strongly induced by low Pi levels, indicating a function of this system in survival during Pi starvation.

Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs

The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through the use of a thin (~ 5 nm) GaAsSb(N) capping layer. In the case of GaAsSb-capped QDs, cross-sectional scanning tunnelling microscopy measurements show that the QD height can be controllably tuned through the Sb content up to ~ 14 % Sb. The increased QD height (together with the reduced strain) gives rise to a strong red shift and a large enhancement of the photoluminescence (PL) characteristics. This is due to improved carrier confinement and reduced sensitivity of the excitonic bandgap to QD size fluctuations within the ensemble. Moreover, the PL degradation with temperature is strongly reduced in the presence of Sb. Despite this, emission in the 1.5 !lm region with these structures is only achieved for high Sb contents and a type-II band alignment that degrades the PL. Adding small amounts of N to the GaAsSb capping layer allows to progressively reduce the QD-barrier conduction band offset. This different strategy to red shift the PL allows reaching 1.5 !lm with moderate Sb contents, keeping therefore a type-I alignment. Nevertheless, the PL emission is progressively degraded when the N content in the capping layer is increased

DCT Type-III for Multicarrier Modulation

In this paper we propose the use of Discrete Cosine Transform Type-III (DCT3) for multicarrier modulation. There are two DCT3 (even and odd) and, for each of them, we derive the expressions for both prefix and suffix to be appended into each data symbol to be transmitted. Moreover, DCT3 are closely related to the corresponding inverse DCT Type-II even and odd. Furthermore, we give explicit expressions for the 1-tap per subcarrier equalizers that must be implemented at the receiver to perform the channel equalization in the frequency-domain. As a result, the proposed DCT3-based multicarrier modulator can be used as an alternative to DFT-based systems to perform Orthogonal Frequency-Division Multiplexing or Discrete Multitone Modulation